strong ir fet? IRF40B207 hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free* ? ? rohs compliant, halogen-free v dss 40v r ds(on) typ. 3.6m ?? max 4.5m ?? i d 95a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab IRF40B207 s d g g d s gate drain source base part number package type standard pack form quantity IRF40B207 to-220 tube 50 IRF40B207 orderable part number 1 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 3 6 9 12 15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 57a t j = 25c t j = 125c
2 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 notes: ?? repetitive rating; pulse width limited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 0.052mh, r g = 50 ? , i as = 57a, v gs =10v. ?? i sd ? 57a, di/dt ? 860a/s, v dd ? v (br)dss , t j ? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ?? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while vds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 18a, v gs =10v. absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, vgs @ 10v (silicon limited) 95 a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 67 i dm pulsed drain current ?? 380 p d @t c = 25c maximum power dissipation 83 w linear derating factor 0.56 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 85 mj e as (thermally limited) single pulse avalanche energy ?? 167 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 1.8 c/w ? r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ? ??? 62 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.039 ??? v/c reference to 25c, i d = 1ma ? r ds(on) ??? 3.6 4.5 m ??? v gs = 10v, i d = 57a ? ??? 5.4 ??? v gs = 6.0v, i d = 29a ? v gs(th) gate threshold voltage 2.2 3.0 3.9 v v ds = v gs , i d = 50a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =40 v, v gs = 0v ??? ??? 150 v ds =40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.0 ??? ?? static drain-to-source on-resistance
3 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 d s g dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 170 ??? ??? s v ds = 10v, i d =57a q g total gate charge ??? 45 68 i d = 57a q gs gate-to-source charge ??? 12 ??? v ds = 20v q gd gate-to-drain charge ??? 15 ??? v gs = 10v ? q sync total gate charge sync. (qg? qgd) ??? 30 ??? t d(on) turn-on delay time ??? 7.8 ??? ns v dd = 20v t r rise time ??? 35 ??? i d = 30a t d(off) turn-off delay time ??? 25 ??? r g = 2.7 ?? t f fall time ??? 19 ??? v gs = 10v ? c iss input capacitance ??? 2110 ??? pf ? v gs = 0v c oss output capacitance ??? 340 ??? v ds = 25v c rss reverse transfer capacitance ??? 220 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 400 ??? v gs = 0v, vds = 0v to 32v ? c oss eff.(tr) output capacitance (time related) ??? 498 ??? v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 95 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 380 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? 0.9 1.3 v t j = 25c,i s = 57a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 6.4 ??? v/ns t j = 175c,i s = 57a,v ds = 40v t rr reverse recovery time ??? 21 ??? ns t j = 25c v dd = 34v ??? 22 ??? t j = 125c i f = 57a, q rr reverse recovery charge ??? 13 ??? nc t j = 25c di/dt = 100a/s ??? ??? 15 ??? t j = 125c ? i rrm reverse recovery current ??? 1.1 ??? a t j = 25c ? nc ?
4 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.6 1.0 1.4 1.8 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 57a v gs = 10v 0 102030405060 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v vds= 8v i d = 57a fig 8. typical gate charge vs. gate-to-source voltage
5 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 fig 10. maximum safe operating area fig 9. typical source-drain diode forward voltage fig 13. typical on-resista nce vs. drain current 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -20 20 60 100 140 180 t j , temperature ( c ) 38 40 42 44 46 48 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 11. drain-to-source breakdown voltage -5 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 e n e r g y ( j ) fig 12. typical c oss stored energy 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 0 5 10 15 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
6 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 15. avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche cu rrent vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 57a
7 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 fig 17. threshold voltage vs. temperature fig 21. typical stored charge vs. dif/dt -75 -25 25 75 125 175 t j , temperature ( c ) 0.5 1.5 2.5 3.5 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 50a id = 250a id = 1.0ma id = 1.0a fig 18. typical recovery current vs. dif/dt 0 200 400 600 800 di f /dt (a/s) 0 1 2 3 4 5 6 7 i r r m ( a ) i f = 38a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 di f /dt (a/s) 0 1 2 3 4 5 6 7 i r r m ( a ) i f = 57a v r = 34v t j = 25c t j = 125c fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 di f /dt (a/s) 10 20 30 40 50 60 70 80 q r r ( n c ) i f = 38a v r = 34v t j = 25c t j = 125c fig 20. typical stored charge vs. dif/dt 0 200 400 600 800 di f /dt (a/s) 0 10 20 30 40 50 60 70 80 q r r ( n c ) i f = 57a v r = 34v t j = 25c t j = 125c
8 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
9 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application .
10 www.irf.com ? 2015 international rectifier submit datasheet feedback april 1, 2015 ? IRF40B207 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/
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